The diffusion carrier concentration profile and junction depth were measured and compared with conventional furnace processing diffusion ( cfd ) . it presented following conclusions : 1 ) the temperature distribution in quartz chamber of rtd furnace is uniform because square resistance is uniform after rtd ; 2 ) the diffusion velocity of rtd furnace by a factor of three compare to conventional furnace processing diffusion ( rtd ) ; 3 ) if diffusion temperature and doping phosphorus are equivalent , doping phosphorus of rtd are more than of cfd in equivalent distance to the silicon surface 實驗研究了快速熱擴散( rtd ) :通過旋涂磷膠和印刷磷漿兩種方式考查了2 4和103 103單晶硅的快速熱擴散特性,發現: 1 )此樣機的溫度場在空間分布上是均勻的; 2 )快速熱擴散可以比傳統擴散快3倍的速度進行擴散; 3 )在擴散溫度和摻雜磷源相同的條件下,與傳統擴散相比,快速熱擴散將雜質向結更深的地方推進。
In this paper , we computed and found the main parameter for facture of ti : linbo3 waveguide , by the function of ti diffusion profile in linbo3 , and the waveguide mode ' s cut - off condition . the parameters include waveguide width : 8 m , titanium film thickness : 50 ~ 60nm , index change : 0 . 006 , diffusion temperature : 1050 and diffusion time : 9 ~ 10 hours 本文從ti擴散特性和波導導模截止條件入手,計算并確定了制作單模ti linbo _ 3波導的主要參數,如:波導寬8 m , ti膜厚50 60nm ,擴散溫度1050 ,擴散時間9 10h等。